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Freescale Semiconductor Technical Data
Document Number: MD7IC21100N Rev. 0, 10/2008
RF LDMOS Wideband Integrated Power Amplifiers
The MD7IC21100N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD - SCDMA. * Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 190 mA, IDQ2A = IDQ2B = 925 mA, Pout = 32 Watts Avg., f = 2167.5 MHz, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 28.5 dB Power Added Efficiency -- 30% Device Output Signal PAR -- 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 38 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, Pout = 110 Watts CW (3 dB Input Overdrive from Rated Pout) * Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 100 Watts CW Pout. * Typical Pout @ 1 dB Compression Point ] 110 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S-Parameters * On - Chip Matching (50 Ohm Input, on a per side basis, DC Blocked) * Internally Matched for Ease of Use * Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1) * Integrated ESD Protection * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
2110 - 2170 MHz, 32 W Avg., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 1618 - 02 TO - 270 WB - 14 PLASTIC MD7IC21100NR1 CASE 1621 - 02 TO - 270 WB - 14 GULL PLASTIC MD7IC21100GNR1
CASE 1617 - 02 TO - 272 WB - 14 PLASTIC MD7IC21100NBR1
VDS1A RFinA VGS1A VGS2A VGS1B VGS2B RFinB VDS1B RFout1/VDS2A
Quiescent Current Temperature Compensation (1) Quiescent Current Temperature Compensation (1)
VDS1A VGS2A VGS1A NC RFinA NC NC RFinB NC VGS1B VGS2B VDS1B
1 2 3 4 5 6 7 8 9 10 11 12
14
RFout1/VDS2A
13
RFout2/VDS2B
RFout2/VDS2B
(Top View) Note: Exposed backside of the package is the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.Select Documentation/Application Notes - AN1977 or AN1987.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Input Power Symbol VDSS VGS VDD Tstg TC TJ Pin Value - 0.5, +65 - 0.5, +6.0 32, +0 - 65 to +150 150 225 29 Unit Vdc Vdc Vdc C C C dBm
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case (Case Temperature 76C, 32 W CW) (Case Temperature 76C, 32 W CW) Stage 1, 28 Vdc, IDQ1A = IDQ1B = 190 mA Stage 2, 28 Vdc, IDQ2A = IDQ2B = 925 mA Symbol RJC 2.7 0.7 Value (2,3) Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Stage 1 -- Off Characteristics
(4)
Symbol IDSS IDSS IGSS
Min -- -- --
Typ -- -- --
Max 10 1 1
Unit Adc Adc Adc
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 -- On Characteristics (4) Gate Threshold Voltage (VDS = 10 Vdc, ID = 50 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1A = IDQ1B = 190 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1A = IDQ1B = 190 mAdc, Measured in Functional Test)
VGS(th) VGS(Q) VGG(Q)
1 -- 5.5
2 2.9 6.3
3 -- 7
Vdc Vdc Vdc
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 4. Each side of device measured separately. (continued)
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Stage 2 -- Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 -- On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 270 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2A = IDQ2B = 925 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2A = IDQ2B = 925 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Stage 2 -- Dynamic Characteristics (1,2) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 380 -- pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1 -- 5.3 0.1 2 2.8 5.9 0.3 3 -- 6.8 0.8 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (3) (In Freescale Wideband 2110- 2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 190 mA, IDQ2A = IDQ2B = 925 mA, Pout = 32 W Avg., f = 2167.5 MHz, Single- Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Power Added Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps PAE PAR ACPR IRL 27 27 5.6 -- -- 28.5 30 6.1 - 38 - 15 32 -- -- - 36 -9 dB % dB dBc dB
Typical Performances (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 190 mA, IDQ2A = IDQ2B = 925 mA, 2110- 2170 MHz Bandwidth Pout @ 1 dB Compression Point, CW IMD Symmetry @ 112 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 60 MHz Bandwidth @ Pout = 32 W Avg. Quiescent Current Accuracy over Temperature with 4.7 k Gate Feed Resistors ( - 30 to 85C) (4) Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 110 W CW Average Group Delay @ Pout = 110 W CW, f = 2140 MHz Part - to - Part Insertion Phase Variation @ Pout = 110 W CW, f = 2140 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) 1. 2. 3. 4. P1dB IMDsym -- -- -- -- -- -- -- -- -- -- 110 50 50 0.3 3 0.6 2.6 35 0.042 0.003 -- -- -- -- -- -- -- -- -- -- MHz dB % ns dB/C dBm/C W MHz
VBWres GF IQT Delay G P1dB
Each side of device measured separately. Part internally matched both on input and output. Measurement made with device in a single - ended configuration. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.Select Documentation/Application Notes - AN1977 or AN1987.
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 RF Device Data Freescale Semiconductor 3
C1 R6 VDD1 R1 R2 C7 1 2 3 4 NC 5 Z1 Z2 6 NC 7 NC 8 VGG1 VGG2 VDD1 R5 C8 C2 Z1 Z2 Z3 Z4 Z5 0.066 x 2.193 Microstrip 0.141 x 0.126 Microstrip 0.628 x 0.045 Microstrip 0.628 x 0.340 Microstrip 0.066 x 0.581 Microstrip Z6 Z7 Z8, Z9 PCB 0.066 x 0.821 Microstrip 0.066 x 0.533 Microstrip 0.080 x 0.902 Microstrip Rogers RO4350B, 0.030, r = 3.5 C10 C17 C19 C5 C6 R3 R4 9 NC 10 11 12 Quiescent Current Temperature Compensation 13 Z9 C12 C13 C15 DUT Quiescent Current Temperature Compensation 14 Z3 Z4 Z5 Z6 C11 C14 Z7 C9 Z8 RF OUTPUT C16 C18 C3 C4 VDD2
VGG2 VGG1 RF INPUT
Figure 3. MD7IC21100NR1(GNR1)(NBR1) Test Circuit Schematic Table 6. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part C1, C2, C3, C4, C5, C6 C7, C8, C9, C10 C11 C12, C13, C14 C15 C16, C17 C18, C19 R1, R2, R3, R4 R5, R6 Description 10 F, 50 V Chip Capacitors 5.1 pF Chip Capacitors 10 pF Chip Capacitor 1.2 pF Chip Capacitors 0.5 pF Chip Capacitor 0.1 F, 100 V Chip Capacitors 1 F, 100 V Chip Capacitors 4.7 K, 1/4 W Chip Resistors 2 ,1/2 W Chip Resistors Part Number GRM55DR61H106KA88B ATC100B5R1CT500XT ATC100B100JT500XT ATC100B1R2CT500XT ATC100B0R5CT500XT GRM32NR72A104KA01B GRM32EER72A105KA01L CRCW12064701FKEA CRCW12102R00FKEA Manufacturer Murata ATC ATC ATC ATC Murata Murata Vishay Vishay
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 4 RF Device Data Freescale Semiconductor
R6 C18 VGG2 R1 R2 C1 VDD1 C3
C7 C9 C16 C4 C12 C15 CUT OUT AREA C11
VGG1
MD7IC21100N Rev. 2 VGG1
C13
C14
C5 C17
R3 C8 R4
VGG2
C2 C10 R5 C19 C6
Figure 4. MD7IC21100NR1(GNR1)(NBR1) Test Circuit Component Layout
Single-ended
l 4
l 4
Quadrature combined
l 4
Doherty
l 2
l 2
Push-pull
Figure 5. Possible Circuit Topologies
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 30 29.6 29.2 Gps, POWER GAIN (dB) 28.8 28.4 28 27.6 27.2 26.8 26.4 26 2060 IRL 2080 2100 2120 2140 2160 2180 2200 PARC ACPR Gps D 31 VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ1A = IDQ1B = 190 mA 30 IDQ2A = IDQ2B = 925 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth 29 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 28 27 -37 -38 -39 -40 -41 -42 2220 ACPR (dBc) -10 -13 -16 -19 -22 -25
IRL, INPUT RETURN LOSS (dB)
-1 -1.2 -1.4 -1.6 -1.8 -2 PARC (dB) 100
f, FREQUENCY (MHz)
Figure 6. Output Peak - to - Average Ratio Compression (PARC) versus Broadband Performance @ Pout = 32 Watts Avg.
30 IDQ2A = IDQ2B = 1388 mA 29 1156 mA Gps, POWER GAIN (dB) 925 mA 28 694 mA 27 463 mA 26 VDD = 28 Vdc IDQ1A = IDQ1B = 190 mA f = 2140 MHz 10 Pout, OUTPUT POWER (WATTS) CW 100 300 Gps, POWER GAIN (dB) 30 238 mA 28 190 mA 143 mA 26 95 mA 32 IDQ1A = IDQ1B = 285 mA
24
VDD = 28 Vdc IDQ2A = IDQ2B = 925 mA f = 2140 MHz 10 Pout, OUTPUT POWER (WATTS) CW 300
25 1
22 1
Figure 7. Power Gain versus Output Power @ IDQ1A = IDQ1B = 190 mA
-10 IMD, INTERMODULATION DISTORTION (dBc)
Figure 8. Power Gain versus Output Power @ IDQ2A = IDQ2B = 925 mA
VDD = 28 Vdc, Pout = 112 W (PEP), IDQ1A = IDQ1B = 190 mA IDQ2A = IDQ2B = 925 mA, Two-Tone Measurements -20 (f1+f2)/2 = Center Frequency of 2140 MHz IM3-U -30 IM3-L IM5-U IM7-U IM7-L IM5-L
-40
-50
-60 1 10 TWO-TONE SPACING (MHz) 100
Figure 9. Intermodulation Distortion Products versus Tone Spacing
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
29 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 28.5 Gps, POWER GAIN (dB) 28 27.5 27 26.5 26 1 -1 dB = 28.79 W 0 ACPR -1 -2 -3 -2 dB = 38.93 W -3 dB = 52.51 W VDD = 28 Vdc IDQ1A = IDQ1B = 190 mA IDQ2A = IDQ2B = 925 mA, f = 2140 MHz -4 Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF -5 15 30 45 60 75 Pout, OUTPUT POWER (WATTS) Gps 25 20 15 90 35 30 D 45 40 -20 -25 -30 -35 -40 -45 -50 ACPR (dBc) ACPR (dBc)
PARC
Figure 10. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
45 60 VDD = 28 Vdc, IDQ1A = IDQ1B = 190 mA, IDQ2A = IDQ2B = 925 mA f = 2140 MHz, Single-Carrier W-CDMA 25C 50 40 3.84 MHz Channel Bandwidth, Input Signal -30C 85C PAR = 7.5 dB @ 0.01% Probability on CCDF 35 40 Gps TC = -30C 25C 30 25C -30C 30 85C 25 20 ACPR 20 D 15 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 0 200 -60 10 0 -10 D, DRAIN EFFICIENCY (%) -20 -30 -40 -50
Gps, POWER GAIN (dB)
Figure 11. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
30 Gain 25 20 GAIN (dB) 15 IRL 10 5 VDD = 28 Vdc Pout = 19 dBm IDQ1A = IDQ1B = 190 mA IDQ2A = IDQ2B = 925 mA -20 -25 -5 -10 -15 IRL (dB) 0
0 -30 1650 1750 1850 1950 2050 2150 2250 2350 2450 2550 2650 f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 RF Device Data Freescale Semiconductor 7
D, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
109 108 1st Stage MTTF (HOURS) 107 2nd Stage 106 105
104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 32 W Avg., and PAE = 30%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 -30 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 -50 -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -40 -10 -20 3.84 MHz Channel BW
PEAK-TO-AVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
f, FREQUENCY (MHz)
Figure 15. Single - Carrier W - CDMA Spectrum
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 8 RF Device Data Freescale Semiconductor
f = 2220 MHz Zload f = 2060 MHz f = 2060 MHz Zsource
f = 2220 MHz
Zo = 50
VDD = 28 Vdc, IDQ1A = IDQ1B = 190 mA, IDQ2A = IDQ2B = 925 mA, Pout = 32 W Avg. f MHz 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource (1) W 40.60 - j16.80 40.51 - j16.95 40.42 - j17.10 40.32 - j17.26 40.21 - j17.42 40.10 - j17.58 39.97 - j17.75 39.84 - j17.91 39.70 - j18.08 Zload W 1.99 - j2.90 1.90 - j2.74 1.82 - j2.58 1.75 - j2.41 1.68 - j2.24 1.62 - j2.08 1.55 - j1.92 1.48 - j1.77 1.41 - j1.60
(1) Both 50 inputs in parallel as per the product test fixture. Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 RF Device Data Freescale Semiconductor 9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
56 55 Pout, OUTPUT POWER (dBm) 54 53 52 51 50 49 48 19 VDD = 28 Vdc, IDQ1A = IDQ1B = 190 mA IDQ2A = IDQ2B = 925 mA, Pulsed CW, 10 sec(on) 10% Duty Cycle, f = 2110 MHz 20 21 22 23 24 25 26 27 28 P1dB = 51.87 dBm (154 W) Actual P3dB = 52.51 dBm (178 W) Pout, OUTPUT POWER (dBm) Ideal 56 55 54 53 52 51 50 49 48 47 18 19 20 VDD = 28 Vdc, IDQ1A = IDQ1B = 190 mA IDQ2A = IDQ2B = 925 mA, Pulsed CW, 10 sec(on) 10% Duty Cycle, f = 2170 MHz 21 22 23 24 25 26 27 28 P1dB = 51.94 dBm (156 W) Actual P3dB = 52.59 dBm (182 W) Ideal
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource P1dB 48.64 - j0.94 Zload 1.02 - j3.36 P1dB
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource 51.04 + j0.32 Zload 0.92 - j3.48
Figure 17. Pulsed CW Output Power versus Input Power @ 28 V @ 2110 MHz
Figure 18. Pulsed CW Output Power versus Input Power @ 28 V @ 2170 MHz
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 10 RF Device Data Freescale Semiconductor
Table 7. Common Source S - Parameters (VDD = 28 V, IDQ1A = IDQ1B = 190 mA, IDQ2A = IDQ2B = 925 mA, TC = 25C, 50 Ohm System)
f MHz 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 S11 |S11| 0.652 0.584 0.967 0.830 0.609 0.376 0.159 0.093 0.200 0.304 0.386 0.432 0.459 0.406 0.334 0.238 0.133 0.020 0.102 0.204 0.280 0.342 0.392 0.455 0.503 0.531 0.566 0.601 0.634 137.6 141.8 149.5 109.6 93.0 73.2 50.5 - 129.9 - 148.4 - 156.5 - 169.3 178.3 163.6 145.8 134.7 120.3 110.4 149.0 - 116.2 - 121.9 - 129.7 - 135.1 - 138.0 - 140.7 - 145.9 - 147.9 - 148.9 - 149.7 - 150.5 |S21| 2.264 6.373 22.975 14.760 12.528 12.727 11.639 11.706 10.735 9.872 8.929 8.421 8.238 9.041 8.312 7.167 5.879 4.788 3.837 3.053 2.415 1.931 1.551 1.231 1.016 0.831 0.677 0.550 0.449 S21 127.9 105.7 30.1 - 54.3 - 81.7 - 115.4 - 142.6 - 174.5 159.4 135.1 113.7 94.5 75.8 52.8 21.8 - 5.1 - 28.8 - 50.7 - 70.6 - 89.3 - 105.9 - 121.3 - 135.6 - 148.0 - 160.1 - 172.2 176.6 166.3 156.9 |S12| 0.000338 0.00176 0.00809 0.00544 0.00445 0.00571 0.00781 0.00711 0.00593 0.00461 0.00366 0.00304 0.00281 0.00253 0.00255 0.00262 0.00270 0.00304 0.00319 0.00356 0.00369 0.00397 0.00446 0.00466 0.00445 0.00434 0.00437 0.00453 0.00486 S12 110.1 - 161.5 148.5 88.8 92.7 97.8 75.0 50.8 37.7 28.3 28.3 33.7 41.0 46.3 54.7 60.5 65.2 66.7 68.5 67.3 66.9 66.4 67.5 57.7 52.3 53.4 54.8 56.6 57.6 |S22| 0.986 0.962 0.633 0.872 0.891 0.848 0.785 0.863 0.921 0.950 0.958 0.960 0.962 0.963 0.971 0.977 0.981 0.982 0.982 0.982 0.981 0.981 0.979 0.980 0.980 0.980 0.981 0.982 0.982 S22 170.7 166.0 163.7 - 179.3 175.2 172.6 177.3 - 178.8 179.9 177.7 176.2 175.5 175.2 175.5 175.7 175.8 175.8 175.8 175.7 175.5 175.2 174.7 174.0 173.3 172.6 171.8 171.1 170.4 170.0
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 RF Device Data Freescale Semiconductor 11
PACKAGE DIMENSIONS
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 12 RF Device Data Freescale Semiconductor
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MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 14 RF Device Data Freescale Semiconductor
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MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 16 RF Device Data Freescale Semiconductor
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MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 RF Device Data Freescale Semiconductor 19
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 20 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family * AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Oct. 2008 * Initial Release of Data Sheet Description
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 RF Device Data Freescale Semiconductor 21
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MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
Rev. 22 0, 10/2008 Document Number: MD7IC21100N
RF Device Data Freescale Semiconductor

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